Abstract:
The field of microelectronics experienced a huge shift from the traditional planar
MOSFET to 3D multi-gated structures, most noticeable being the FinFET. FinFET is
regarded the most favourable for progressing CMOS downscalling in the nanometer
scale due to its ability to suppress short channel effects due to its better gate control,
enabling it to achieve performance of high quality and low power. The fin dimen sions play a huge role in the design of a FinFET. Looking at the gadget’s Figure-of merits, the geometries of the transistor are specifically delicate. In this work, a 30
nm Ge based FinFET is designed by parameter omptimization which is achieved
through parameter variation using Silvaco software. Literature where Poisson and
Schrodinger equations were used to come up with a theoretical analytical quan tum model, is used. The model is based on the quantum mechanical variational
approach and accounts for the Ge channel thickness which depends on electric po tential. Since the electrical characteristics are affected by design parameters such as
doping concentrations, the most influential factors being on/off current ratio and
threshold voltage, were determined through investigation of effects that arose due
to variation of multiple design parameters. Systematical investigation is done with
the help of graphical data such as current-voltage characteristics and mathematical
models which include drain current model. Simulation results show that physical
parameters in the form of fin dimensions also influence electrical characteristics of
the device. It is also observed that ION/OFF ≈ 106A when the device operating in the
range 0.05V≤ VGS ≤ 1V. Properly scaling the drain and source depths and increas ing the doping density for the oxide is mandatory in order to keep short channel
effects in the form of DIBL minimal
Gofaone, M (2024). Design of age based FINFET for CPU switch applications. Afribary. Retrieved from https://track.afribary.com/works/design-of-age-based-finfet-for-cpu-switch-applications
Gofaone, Mogosetso "Design of age based FINFET for CPU switch applications" Afribary. Afribary, 12 Apr. 2024, https://track.afribary.com/works/design-of-age-based-finfet-for-cpu-switch-applications. Accessed 05 Nov. 2024.
Gofaone, Mogosetso . "Design of age based FINFET for CPU switch applications". Afribary, Afribary, 12 Apr. 2024. Web. 05 Nov. 2024. < https://track.afribary.com/works/design-of-age-based-finfet-for-cpu-switch-applications >.
Gofaone, Mogosetso . "Design of age based FINFET for CPU switch applications" Afribary (2024). Accessed November 05, 2024. https://track.afribary.com/works/design-of-age-based-finfet-for-cpu-switch-applications