Dependence of open circuit voltage in protocrystalline Si:H solar cells on carrier recombination in p/i interface and bulk regions
Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current–voltage (JD–V) and short-circuit current–open-circuit voltage (Jsc–Voc) characteristics of hydrogenated amorphous-silicon (a-Si:H) p–i–n and n–i–p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc–Voc characteri...
Quantitative Correlation of High Quality a-Si:H p-i-n Solar Cell Characteristics with Properties of the Bulk and p/i Interface Region
Studies have been carried out on high quality hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells with protocrystalline i-layers to establish the nature of p/i interfaces and to quantify their contributions to various solar cell characteristics. The p-a-SiC:H,B/i-a-Si:H/n-μcSi:H,P cell structures used had the a-Si:H i-layers deposited from hydrogen diluted silane with R≡[H2 ]/[SiH4]=10. The high quality p/i interface regions obtained with R=10, indicated by the high and stable open c...
The Role of Phase Transitions in Protocrystalline Si:H on the Performance their of Solar Cells
A systematic study has been carried out to quantify the effect of microcrystallite nucleation in the intrinsic layer of protocrystalline Si:H p-i-n solar cells prepared by rf plasma enhanced chemical vapor deposition (PECVD). Real-time spectroscopic ellipsometry (RTSE) results that have previously identified the transitions from amorphous to microcrystalline phase were confirmed with atomic force microscopy (AFM) images. The effects of the phase transitions in the bulk intrinsic layer, as wel...
The Mueller Report: Moving Beyond Sustainability Indicators to Sustainability Action
The assignment that we gave ourselves was: Cut the ecological impact of Mueller Building in half while creating healthier working conditions for all building occupants. The analysis on the following pages reveals that it is, indeed, possible to reduce significantly Mueller's aggregate impacts in many areas. The majority of environmental improvements that Mueller could make would actually save money! For example, by following the suggestions outlined in the energy portions of this study Muelle...
Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics
Insights into the growth processes and evolution of microstructure in intrinsic hydrogenated silicon (Si:H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. To assess the effects of transition regions from the amorphous to mixed microcrystalline phases, cell structures with and without such regions at different depths in the i-layer from the p-contact have been investigated. ...
Progress in Amorphous Silicon Based Solar Cell Technology
As the negative environmental effects of the current use of non-renewable energy sources have become apparent, hydrogenated amorphous silicon (a-Si:H) solar cell technology has advanced to provide a means of powering a future sustainable society. Over the last 25 years, a-Si:H solar cell technology has matured to a stage where there is currently a production of 30 MWpeak/year; and this production capacity continues to increase. The progress is due to the continuous advances made in new materi...
Stable a-Si: H-Based Multijunction Solar Cells with Guidance from Real-Time Optics
Phase diagrams that characterize plasma-enhanced chemical vapor deposition of Si thin films at low substrate temperature (200 C) have been established using real time spectroscopic ellipsometry as a probe of thin film microstructural evolution and optical properties. These deposition phase diagrams describe the regimes over which predominantly amorphous and microcrystalline Si phases are obtained as a function of the accumulated film thickness and the hydrogen-to-silane gas flow ratio R=[H2]/...
Microstructurally Engineered p-layers for Obtaining High Open-Circuit Voltages in a-Si:H n-i-p Solar Cells
A study was carded out with the goal of obtaining high open circuit voltages (Voc) in a-Si:H n-i-p solar cells, taking into account the evolutionary nature of the microstructure of the p-layers during growth. It is found that cells with players in the protocrystalline Si:H growth regime give the highest values of Voc not those with microcrystalline Si:H p-layers. Evidence for this conclusion is presented whereby Voc is related directly to the microstructure of the p-layers, as characterized u...
Maximization of the open circuit voltage for a-Si:H n-i-p solar cells by incorporation of protocrystalline Si:H p-type layers
In studies of hydrogenated amorphous silicon (a-Si:H) n–i–p solar cells fabricated by rf plasma-enhanced chemical vapor deposition (PECVD), we have found that the maximum open circuit voltage (Voc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum hydrogen-to-silane flow ratio possible without crossing the thickness-dependent transition into the...
Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics
We have developed a Kramers–Kronig consistent analytical expression to fit the measured optical functions of hydrogenated amorphous silicon (a-Si:H) based alloys, i.e., the real and imaginary parts of the dielectric function (ϵ1,ϵ2) (or the index of refraction n and absorption coefficient α) versus photon energy E for the alloys. The alloys of interest include amorphous silicon–germanium (a-Si1−xGex:H) and silicon–carbon (a-Si1−xCx:H), with band gaps ranging continuously from ∼...
Correlation of Light-Induced Changes in a-Si:H Films with Characteristics of Corresponding Solar Cells
For the first time direct correlations are obtained between the light induced changes under 1 sun illumination in the properties of a-Si:H and those in the characteristics of p-i-n cells incorporating identically-prepared i-layers. These correlations were obtained after account was taken of the effects that the location of the electron and hole quasi-Fermi levels have on the carrier recombination that occurs through the different gap states. The changes in midgap state density, as measured on...
Thickness Evolution of the Microstructural and Optical Properties of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region
The ability to characterize the phase of the intrinsic (i) layers incorporated into amorphous silicon [a-Si:H] and microcrystalline silicon [μc-Si:H] thin film solar cells is critically important for cell optimization. In this research, a new method has been developed to extract the thickness evolution of the μc-Si:H volume fraction in mixed phase amorphous + microcrystalline silicon [(a+μc)-Si:H] i-layers. This method is based on real time spectroscopic ellipsometry measurements performed...
Photovoltaics — a path to sustainable futures
As both population and energy use per capita increase, modern society is approaching physical limits to its continued fossil fuel consumption. The immediate limits are set by the planet’s ability to adapt to a changing atmospheric chemical composition, not the availability of resources. In order for a future society to be sustainable while operating at or above our current standard of living a shift away from carbon based energy sources must occur. An overview of the current state of active...
Absence of carrier recombination associated with the defect pool model in a-Si:H i-layers: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells
Forward bias current–voltage characteristics (JD–V) were studied for both p–i–n (superstrate) and n–i–p (substrate) (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and different thickness i-layers. Contributions of the p/i interfaces to the JD–V characteristics were separated, and the dependence on the thickness of the i-layers was established. Equivalence was observed in a comparison of the characteristics of p–i–n and n–i–p cells....
Light Induced Defect States in Hydrogenated Amorphous Silicon Centered Around 1.05 and 1.2eV from the Conduction Band Edge
To take into account the presence of multiple light-induced defect states in hydrogenated amorphous silicon (a-Si:H) the evolution of the entire spectra of photoconductive subgap absorption, α(hν), has been analyzed. Using this approach two distinctly different light-induced defect states centered around 1.0 and 1.2 eV from the conduction band edge are clearly identified. Results are presented on their evolution and respective effects on carrier recombination that clearly point to the impor...
