Carrier Transport and Recombination In A-SI: H PIN Solar Cells in Dark and Under Illumination

Abstract A study has been carried out on the forward bias dark current and the short circuit current-open circuit voltage characteristics of a-Si: H pin solar cells over wide range of illumination intensities. Results are presented with superposition of these characteristics over extended current voltage regimes. This and the observed separation between these characteristics are consistent with the arguments presented based on first principle arguments.