Journal of Alloys and Compounds 506 (2010) 678–682, doi:10.1016/j.jallcom.2010.07.041,
Abstract::
The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10−9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps of the Ge-doped BaSnO3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyzed using Eg(T) = Ego + βT relation.
The rate of change of the band gap β of BaSn0.99Ge0.01O3 was found to be 7.6 × 10−4 (eV/°C). A minimum optical band gap value of 2.95 eV was observed for the sample sintered at 1400 °C. It is evaluated that BaSn0.99Ge0.01O3 is a wide band gap semiconductor and its semiconducting properties change with sintering temperature.
Koferstein, R. & Yakuphanoglu, F (2021). Semiconducting Properties of Ge-BaSnO3. Afribary. Retrieved from https://track.afribary.com/works/semiconducting-properties-of-ge-basno3
Koferstein, Roberto, and Fahrettin Yakuphanoglu "Semiconducting Properties of Ge-BaSnO3" Afribary. Afribary, 14 Jul. 2021, https://track.afribary.com/works/semiconducting-properties-of-ge-basno3. Accessed 23 Nov. 2024.
Koferstein, Roberto, and Fahrettin Yakuphanoglu . "Semiconducting Properties of Ge-BaSnO3". Afribary, Afribary, 14 Jul. 2021. Web. 23 Nov. 2024. < https://track.afribary.com/works/semiconducting-properties-of-ge-basno3 >.
Koferstein, Roberto and Yakuphanoglu, Fahrettin . "Semiconducting Properties of Ge-BaSnO3" Afribary (2021). Accessed November 23, 2024. https://track.afribary.com/works/semiconducting-properties-of-ge-basno3