Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams for p-type hydrogenated silicon (Si: H) films prepared at low temperature (200° C) by rf plasma-enhanced chemical vapor deposition using gas mixtures of SiH4, H2, and BF3.
Pearce, J. (2019). Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells. Afribary. Retrieved from https://track.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-n-i-p-solar-cells
Pearce, Joshua "Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells" Afribary. Afribary, 22 Apr. 2019, https://track.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-n-i-p-solar-cells. Accessed 05 Oct. 2024.
Pearce, Joshua . "Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells". Afribary, Afribary, 22 Apr. 2019. Web. 05 Oct. 2024. < https://track.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-n-i-p-solar-cells >.
Pearce, Joshua . "Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells" Afribary (2019). Accessed October 05, 2024. https://track.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-n-i-p-solar-cells